Sanan Optoelectronics announcement, the Company's wholly owned subsidiary, Xiamen Sanan Optoelectronics Technology Co., Ltd. received U.S. Patent and Trademark Office issued a patent certificate, patent name antistatic GaN-based light-emitting device and its production method, the certificate number US8217417B2.
Under the precondition of the invention includes an antistatic ability, simplifying the production process and to maximize the use of the light emitting mesa in order to avoid the gallium nitride-based light emitting diode, the light emitting efficiency is lowered.http://www.tungsten-molybdenum-sapphire.com/
Under the precondition of the invention includes an antistatic ability, simplifying the production process and to maximize the use of the light emitting mesa in order to avoid the gallium nitride-based light emitting diode, the light emitting efficiency is lowered.http://www.tungsten-molybdenum-sapphire.com/
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