Mitsubishi Chemical plans to exclusion of one billion yen amplification times GaN substrate capacity

Due to strong demand for lighting with LED, Mitsubishi Chemical plans to cast one billion yen in the fall of 2013 before the LED nitride (GaN) substrate can produce amplified 1 times (since in 2,000 to 4,000 pieces).

Reportedly LED lighting, although more than half of a sapphire substrate with high output, stable luminescence characteristics, except for GaN substrate produced by Mitsubishi Chemical, plus and sapphire substrate, equipped with LED lighting GaN substrate consumption power can be reduced by 50 -70%, prolong lighting product life, from lighting factory orders surge.

Mitsubishi Chemical has been the Tsukuba cause the production of 2-inch diameter GaN substrate per month hundreds chip, after a planned increase in production before the end of this year to 2,000 chip capacity ceiling. Except as the cause of Tsukuba, Mitsubishi Chemical will the Mizushima cause the import can produce up to 1,000 pieces of GaN substrate production equipment (products 4 inch in diameter), and mass production will begin in April 2013, after and to to additional monthly production set in the the Mizushima cause the plan before the end of the autumn of 2013 the same as 1,000 pieces GaN substrate production equipment (4-inch diameter).