Tamura Seisakusho and its subsidiaries lightwave developed a white LED using gallium oxide (β-Ga2O3), and exhibited in Japan 3rd LED and organic EL lighting exhibition. The LED by a combination of a blue LED chip on β type-a2O3 substrate produced by the GaN-based semiconductor using a phosphor. Its selling point is that, when compared to the production and use on a sapphire substrate ordinary blue LED chip, easy to improve the characteristics of the optical output power.
Tamura and lightwave this from the floor exhibited two white LEDs were used 0.3mm square and 2mm square and the blue LED chip. 0.3mm square products a 400mA-driven 2mm the square products to 6A driven. The 2mm square brightness of the product about 500lm.
Since the sapphire substrate having insulation properties, the product must therefore sapphire substrate using the transverse structure of the lateral configuration of the anode electrode and the cathode electrode. Β-Ga2O3 substrate has high conductivity, and therefore the vertical structure of the anode and the cathode respectively formed on the front and rear surfaces of the LED chip may be used. The vertical structure and the horizontal structure, not only can reduce the resistance and thermal resistance of the component, but also easy to distribute the current uniformly. The smaller the element resistance and thermal resistance, the LED chips generate less heat, and therefore suitable for large current drive.
Currently, GaN substrate using vapor phase growth method of the named HVPE method to manufacture the substrate of β-Ga2O3 is used in the solution growth method. Theoretically speaking, the solution growth method is more adapted to improve the quality of the substrate and a large size.
Have achieved a product of the β-Ga2O3 substrate diameter is 2 inches. Tamura Seisakusho plan to the prototype 4 inches in 2014, and officially launched the product in 2015, will also challenge the developers caliber 6-inch products.
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