Toshiba released the specifications of LED products using gallium nitride production

In mid-December 2012, Toshiba announced that it has developed a 200mm silicon wafer manufacturing GaN LED production process, through the use of new silicon, gallium nitride (GaN-on-Si) technology to LED chip, and hasPreparing for mass production. The company has released the specifications of existing products, including a color temperature of 3000K, a color temperature of 4000K, and two color temperature 5000K LED products.

Several products specifications are given under 350mA drive current test data. Typical forward voltage of 2.9V, the color temperature of 5000K, the color rendering index of 70 TL1F1 NW0 L luminous efficiency of 110 lm / W, and the same as the 5000K color rendering index rises to 80 NW1's TL1F1 of L the light efficiency is reduced to 94 lm / W. The other two products, 3000K of the TL1F1-LW1 and 4000K WH1 of the TL1F1-of L color rendering index of 80, light efficiency 84 lm / W.

The specifications also shows the maximum rating of the new LED products. Continuous drive current up to 800mA, pulse up to 1A. The maximum power loss of 2.9W. When using the maximum power luminous flux accessible doubled.